ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,511,189, issued on Dec. 30, was assigned to Rohm Co. Ltd. (Kyoto, Japan).
"Non-volatile memory device" was invented by Seiji Takenaka (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device (100) comprises a memory cell (11A, 11B) that is, in an initial state, in a state of having storage data of a first logical value stored therein, and that is, after execution of a program operation, in a state of having storage data of a second logical value stored therein, and an error correction circuit (14) that corrects only an error caused by a change in logical value of the storage data stored in the memory cell from the second...