ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,652, issued on Dec. 16, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Masatsugu Yutani (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor layer; a gate trench formed in the semiconductor layer; an insulating layer formed on the semiconductor layer; a gate electrode buried in the gate trench via the insulating layer; a gate wiring formed on the insulating layer and electrically connected to the gate electrode; and a protection trench formed in the semiconductor layer, wherein the semiconductor layer includes an outer peripheral region including outer edg...