ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,548, issued on Aug. 5, was assigned to Rohm Co. Ltd. (Kyoto, Japan).
"Semiconductor device" was invented by Makoto Sada (Kyoto, Japan), Toru Takuma (Kyoto, Japan) and Shuntaro Takahashi (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a split-gate transistor connected between a drain electrode (output electrode OUT) and a ground electrode and having a plurality of individually controllable channel regions; an active clamp circuit configured to limit the output voltage VOUT appearing at the output electrode to a clamp voltage or below; and a gate control circuit configured to raise the ON resistance of the ...