ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,401,000, issued on Aug. 26, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Kenji Hayashi (Kyoto, Japan), Akihiro Suzaki (Kyoto, Japan), Masaaki Matsuo (Kyoto, Japan), Ryuta Watanabe (Kyoto, Japan) and Makoto Ikenaga (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a mounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each swit...