ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,423, issued on April 15, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Terahertz element and semiconductor device" was invented by Toshikazu Mukai (Kyoto, Japan), Jaeyoung Kim (Kyoto, Japan) and Tomoichiro Toyama (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes ...