ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,268, issued on April 15, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Kentaro Nasu (Kyoto, Japan) and Takaaki Yoshioka (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor chip having a main surface, a first conductivity type drift layer formed in a surface layer portion of the main surface, a trench gate structure formed in the main surface such as to be in contact with the drift layer, a second conductivity type channel region formed in the drift layer such as to cover a side wall of the trench gate structure, and first and second source/drain regions fo...