ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,994, issued on April 15, was assigned to Rohm Co. Ltd. (Kyoto, Japan).
"Non-volatile memory" was invented by Seiji Takenaka (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory includes a memory cell having a first transistor and a second transistor, a driving circuit arranged to apply a read voltage to gates of the first and second transistors, and a signal output circuit arranged to output a signal associated with a first value or a signal associated with a second value, based on drain currents of the first and second transistors, in a read operation in which the read voltage is applied. The second transistor is consti...