US Patent Issued to ROBERT BOSCH on Oct. 7 for "Vertical field effect transistor and method for the formation thereof" (German Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,635, issued on Oct. 7, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Vertical field effect transistor and method for the formation thereof" was invented by Jens Baringhaus (Sindelfingen, Germany), Daniel Krebs (Aufhausen, Germany) and Dick Scholten (Stuttgart, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field effect transistor. The vertical field effect transistor includes: a drift area; a semiconductor fin on or above the drift area; a connection area on or above the semiconductor fin; and a gate electrode, which is formed adjacent to at least one side wall of the semiconductor fin, the semiconductor fin, in a first ...