US Patent Issued to ROBERT BOSCH on March 18 for "Vertical field-effect transistor and method for forming same" (German Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,252, issued on March 18, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Vertical field-effect transistor and method for forming same" was invented by Jens Baringhaus (Sindelfingen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field effect transistor, including a drift region having a first conductivity type, a trench structure on or above the drift region, a shielding structure, and a source/drain electrode. The trench structure includes at least one side wall at which a field effect transistor (FET) channel region is formed. The FET channel region includes a III-V heterostructure for forming a two-dimensional electro...