US Patent Issued to ROBERT BOSCH on Jan. 28 for "Vertical field-effect transistor and method for forming same" (German Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,939, issued on Jan. 28, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Vertical field-effect transistor and method for forming same" was invented by Jens Baringhaus (Sindelfingen, Germany), Daniel Krebs (Aufhausen, Germany) and Dick Scholten (Stuttgart, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field-effect transistor. The transistor includes: a drift region having a first conductivity type; a semiconductor fin on or over the drift region; and a source/drain electrode on or over the semiconductor fin, the semiconductor fin having an electrically conductive region that connects the source/drain electrode to the drift...