ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,566, issued on Jan. 27, was assigned to Robert Bosch GmbH (Stuttgart, Germany).
"Vertical field-effect transistor and method for forming same" was invented by Jens Baringhaus (Sindelfingen, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field-effect transistor. The vertical field-effect transistor includes: a drift area; a first semiconductor fin on or above the drift area and electrically conductively connected thereto; a plurality of second semiconductor fins on or above the drift area, the plurality of second semiconductor fins being formed connected electrically nonconductively to the drift area, the plurality of second semico...