US Patent Issued to ROBERT BOSCH on Dec. 9 for "Vertical field-effect transistor, method for producing a vertical field-effect transistor and component having vertical field-effect transistors" (German Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,570, issued on Dec. 9, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Vertical field-effect transistor, method for producing a vertical field-effect transistor and component having vertical field-effect transistors" was invented by Christian Huber (Ludwigsburg, Germany) and Jens Baringhaus (Sindelfingen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field-effect transistor. The vertical field-effect transistor has: A first semiconductor layer, which has a p-type conductivity, on or over a drift region; a groove structure which penetrates the first semiconductor layer vertically, the groove structure having at least one s...