US Patent Issued to ROBERT BOSCH on Aug. 19 for "Vertical fin field effect transistor, vertical fin field effect transistor arrangement, and method for forming a vertical fin field effect transistor" (German Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,202, issued on Aug. 19, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Vertical fin field effect transistor, vertical fin field effect transistor arrangement, and method for forming a vertical fin field effect transistor" was invented by Daniel Krebs (Aufhausen, Germany), Joachim Rudhard (Leinfelden-Echterdingen, Germany), Alberto Martinez-Limia (Tuebingen, Germany), Jens Baringhaus (Sindelfingen, Germany) and Wolfgang Feiler (Reutlingen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical fin field-effect transistor. The transistor has a semiconductor fin, an n-doped source region, an n-doped drift region, an n-doped channel...