US Patent Issued to Rigetti on Dec. 30 for "Voltage-assisted annealing to alter tunnel junction properties" (American, Canadian Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,136, issued on Dec. 30, was assigned to Rigetti & Co LLC (Berkeley, Calif.).

"Voltage-assisted annealing to alter tunnel junction properties" was invented by David Pappas (Boulder, Colo.), Mark Field (Campbell, Calif.), Eyob A. Sete (Walnut Creek, Calif.), Joshua Yousouf Mutus (Kelowna, Canada) and Xiqiao Wang (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a general aspect, junction properties of tunnel junctions are altered by voltage-assisted annealing processes. In some cases, a method includes obtaining a circuit comprising a tunnel junction, modifying a junction resistance of the tunnel junction by applying a voltage across ...