US Patent Issued to RICHTEK TECHNOLOGY on Sept. 2 for "NMOS half-bridge power device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,371, issued on Sept. 2, was assigned to RICHTEK TECHNOLOGY Corp. (Zhubei, Taiwan).

"NMOS half-bridge power device and manufacturing method thereof" was invented by Chih-Wen Hsiung (Hsinchu, Taiwan), Wu-Te Weng (Hsinchu, Taiwan) and Ta-Yung Yang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An NMOS half-bridge power device includes: a semiconductor layer, a plurality of insulation regions, a first N-type high voltage well and a second N-type high voltage well, which are formed by one same ion implantation process, a first P-type high voltage well and a second P-type high voltage well, which are formed by one same ion implantation pr...