US Patent Issued to RICHTEK TECHNOLOGY on March 11 for "Power device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,250,834, issued on March 11, was assigned to RICHTEK TECHNOLOGY Corp. (Zhubei, Taiwan).

"Power device and manufacturing method thereof" was invented by Kuo-Hsuan Lo (Taoyuan, Taiwan), Chien-Hao Huang (Penghu, Taiwan), Chu-Feng Chen (Hsibchu, Taiwan) and Wu-Te Weng (Hsibchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power device includes: a semiconductor layer, a well region, a body region, a gate, a source, a drain, a first salicide block (SAB) layer and a second SAB layer. The first SAB layer is formed on a top surface of the semiconductor layer, and is located between the gate and the drain, wherein a part of the well is located vertica...