ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,186, issued on July 15, was assigned to RICHTEK TECHNOLOGY Corp. (Zhubei, Taiwan).

"Pip structure and manufacturing methods of high voltage device and capacitor device having PIP structure" was invented by Chin-Chin Tsai (Tainan, Taiwan) and Yong-Zhong Hu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A polysilicon-insulator-polysilicon (PIP) structure includes: a first polysilicon region formed on a substrate; a first insulation region formed outside one side of the first polysilicon region and adjoined to the first polysilicon region in a horizontal direction; and a second polysilicon region formed outside one side of the first in...