US Patent Issued to RICHTEK TECHNOLOGY on July 1 for "Integration manufacturing method of depletion high voltage NMOS device and depletion low voltage NMOS device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,448, issued on July 1, was assigned to RICHTEK TECHNOLOGY Corp. (Zhubei, Taiwan).

"Integration manufacturing method of depletion high voltage NMOS device and depletion low voltage NMOS device" was invented by Wu-Te Weng (Hsinchu, Taiwan), Chih-Wen Hsiung (Hsinchu, Taiwan) and Ta-Yung Yang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integration manufacturing method of a depletion high voltage NMOS device and a depletion low voltage NMOS device includes: providing a substrate; forming a semiconductor layer on the substrate; forming insulation regions on the semiconductor layer; forming an N-type well in the depletion high voltage...