ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,592, issued on April 8, was assigned to RICHTEK TECHNOLOGY Corp. (Zhubei, Taiwan).
"High voltage device and manufacturing method thereof" was invented by Kun-Huang Yu (Hsinchu, Taiwan), Chien-Yu Chen (Kaohsiung, Taiwan), Ting-Wei Liao (Taichung, Taiwan), Chih-Wen Hsiung (Hsinchu, Taiwan), Chun-Lung Chang (Yilan, Taiwan), Kuo-Chin Chiu (Hsinchu, Taiwan), Wu-Te Weng (Hsinchu, Taiwan), Chien-Wei Chiu (Yunlin, Taiwan), Yong-Zhong Hu (Hsinchu, Taiwan) and Ta-Yung Yang (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region ...