US Patent Issued to RFHIC on March 25 for "Method of forming vias in a GaN/diamond wafer" (North Carolina Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,206, issued on March 25, was assigned to RFHIC Corp. (Anyang-si, South Korea).

"Method of forming vias in a GaN/diamond wafer" was invented by Won Sang Lee (Chapel Hill, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semicondu...