US Patent Issued to Resonac on Sept. 2 for "Dry etching method, production method for semiconductor element, and cleaning method" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,854, issued on Sept. 2, was assigned to Resonac Corp. (Tokyo).

"Dry etching method, production method for semiconductor element, and cleaning method" was invented by Kazuma Matsui (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride, which is a compound of bromine or iodine and fluorine, is brought into contact with a member to be etched (12) having an etching object, which is an object to be etched by the etching gas, thereby etching the etching object without using plasma. The etching object contains at least one metal selected from among ...