US Patent Issued to Resonac on Nov. 11 for "Plasma etching method and method for manufacturing semiconductor element" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,716, issued on Nov. 11, was assigned to Resonac Corp. (Tokyo).

"Plasma etching method and method for manufacturing semiconductor element" was invented by Kazuma Matsui (Tokyo) and Yuki Oka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be et...