US Patent Issued to Resonac on May 20 for "Etching method and method for manufacturing semiconductor element" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,242, issued on May 20, was assigned to Resonac Corp. (Tokyo).

"Etching method and method for manufacturing semiconductor element" was invented by Kazuma Matsui (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an etching method capable of selectively etching an etching target containing a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom with respect to a specific non-etching target without using plasma. The etching method includes an etching step in which an etching gas containing fluorine gas is brought into contact with a member to be etched including an etching target and a non-etchin...