ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,809, issued on March 18, was assigned to Resonac Corp. (Tokyo).
"SiC substrate and SiC epitaxial wafer" was invented by Yoshitaka Nishihara (Tokyo) and Hiromasa Suo (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a SiC substrate of the present invention, in a case where the SiC substrate is supported on an inner periphery by an inner peripheral support surface positioned to overlap a circumference having a radius of 17.5 mm from a center, in a case where a plane connecting first points of an upper surface overlapping the inner peripheral support surface when seen in a thickness direction is defined as a first reference plane, and an upper ...