US Patent Issued to Resonac on July 8 for "SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,687, issued on July 8, was assigned to Resonac Corp. (Tokyo).

"SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer" was invented by Naoto Ishibashi (Chichibu, Japan) and Keisuke Fukada (Chichibu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1x1018/cm3 or more and 1x1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less."

The patent was filed on April 25, 2024, under...