US Patent Issued to Resonac on July 8 for "Method for producing substrate having through-silicon vias, substrate having through-silicon vias, and copper paste for through-silicon via formation" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,914, issued on July 8, was assigned to Resonac Corp. (Tokyo).

"Method for producing substrate having through-silicon vias, substrate having through-silicon vias, and copper paste for through-silicon via formation" was invented by Yoshinori Ejiri (Tokyo), Hideo Nakako (Tokyo), Yuki Kawana (Tokyo), Motoki Yonekura (Tokyo), Shinichirou Sukata (Tokyo), Manabu Ishii (Tokyo), Masaru Fujita (Tokyo), Michiko Natori (Tokyo), Masahiro Kimura (Tokyo) and Ryo Honna (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An aspect of the invention is a method for producing a substrate having through-silicon vias, the method including a preparation step of preparing...