ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,534,826, issued on Jan. 27, was assigned to Resonac Corp. (Tokyo).
"SiC substrate and SiC epitaxial wafer" was invented by Hiromasa Suo (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC substrate according to the present embodiment has a diameter of 195 mm or more and a micropipe density of 0.01/cm2 or less."
The patent was filed on Aug. 20, 2024, under Application No. 18/809,911.
*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=12534826&OS=12534826&RS=12534826
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