US Patent Issued to Resonac on Feb. 18 for "Method of evaluating SiC substrate, method of manufacturing SiC epitaxial wafer, and method of manufacturing SiC device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,228,523, issued on Feb. 18, was assigned to Resonac Corp. (Tokyo).

"Method of evaluating SiC substrate, method of manufacturing SiC epitaxial wafer, and method of manufacturing SiC device" was invented by Ling Guo (Chichibu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "This method of evaluating a SiC substrate includes a preparation step of preparing two or more SiC substrates obtained from the same SiC ingot grown from the same seed crystal, a defect position specifying step of specifying positions of defects in the substrates by observing a main surface of each of the two or more SiC substrates, and a comparison step of comparing the positions...