ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,604, issued on Dec. 16, was assigned to Research & Business Foundation Sungkyunkwan University (Suwon-si, South Korea).
"Multi-valued memory device based on negative transconductance using monolithic WSe2 thin film" was invented by Sungjoo Lee (Seongnam-si, South Korea), Hyeonje Son (Suwon-si, South Korea), Haeju Choi (Suwon-si, South Korea), Taeho Kang (Seoul, South Korea), Chanwoo Kang (Incheon, South Korea), Sungpyo Baek (Suwon-si, South Korea), Hyun Ho Yoo (Suncheon-si, South Korea) and Jae Hyeok Ju (Changwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a negative transconductance device and a multi-valued memory ...