US Patent Issued to Rensselaer Polytechnic Institute on July 1 for "Silicon nitride waveguide coupled photodiode" (New York, Oregon Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,472, issued on July 1, was assigned to Rensselaer Polytechnic Institute (Troy, N.Y.).

"Silicon nitride waveguide coupled photodiode" was invented by Asif Jahangir Chowdhury (Portland, Ore.) and Mona Mostafa Hella (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photodiode structure including a silicon substrate, an oxide layer on the silicon substrate, a silicon on insulator region on the oxide layer, a germanium absorption region, a silicon nitride waveguide, a cathode region, and an anode region is provided. The germanium absorption region is at least partially disposed in a recess of the silicon on insulator region. The germanium...