US Patent Issued to RENESAS ELECTRONICS on Sept. 9 for "Manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,346, issued on Sept. 9, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Manufacturing method of semiconductor device" was invented by Takahiro Maruyama (Tokyo), Takuya Hagiwara (Tokyo) and Takuya Maruyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes a step of preparing a semiconductor substrate having a first main surface and a second main surface, a step of forming a recess in the first main surface and embedding an insulating film in the recess, a step of forming a polysilicon film on the insulating film, a step of forming an interlayer insulating film on the first main surfac...