US Patent Issued to RENESAS ELECTRONICS on Sept. 30 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,951, issued on Sept. 30, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Seigo Namioka (Tokyo), Hitoshi Matsuura (Tokyo) and Ryota Kuroda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a trench emitter electrode located at a boundary between one end of an active cell region and an inactive cell region, a trench gate electrode located at a boundary between the other end of the active cell region and the inactive cell region, an end trench gate electrode connected to one end of the trench gate electrode, and an end trench emitter elec...