ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,401, issued on Sept. 30, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Keiichi Furuya (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of wirings which are layered over the first main surface in a thickness direction that is a direction extending from the second main surface to the first main surface, and a passivation film which covers a top wiring that is a wiring being at a farthest position from the first main surface in the thickness direction, of the plurality of wirings....