ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,036, issued on Sept. 30, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Koki Narita (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Breakdown of an internal element during an ESD application of a semiconductor device is suppressed. When static electricity is applied to an I/O signal pad, a discharge path is formed by an electrostatic protection mechanism. A gate switch circuit is arranged corresponding to a transistor to be protected having a drain electrically connected to the I/O signal pad. The gate switch circuit electrically connects a gate of the transistor to be protected to a first node havin...