US Patent Issued to RENESAS ELECTRONICS on Sept. 2 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,418, issued on Sept. 2, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Ryota Kuroda (Tokyo) and Hitoshi Matsuura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A built-in resistor electrically connecting a trench gate electrode and a gate pad is formed of a conductive film formed on a semiconductor substrate via an insulating film. Here, a film thickness of the insulating film is larger than a film thickness of an insulating film in a trench and is smaller than an insulating film which is a field oxide film."

The patent was filed on Nov. 3, 2021, under Applicatio...