US Patent Issued to RENESAS ELECTRONICS on Oct. 7 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,604, issued on Oct. 7, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Kazuhiko Segi (Tokyo) and Yoshiyuki Kawashima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a memory region, a memory-region first portion in which no raised epitaxial layer is formed, a memory-region second portion in which a first raised epitaxial layer is formed, and a memory-region third portion in which a second raised epitaxial layer is formed are defined. In the memory-region first portion, a first-diffusion-layer first portion of a memory transistor and a second-diffusion-layer first ...