ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,683, issued on Oct. 7, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Hiroya Shimoyama (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A sense MOSFET is formed at a position surrounded by a main MOSFET and a source pad connected to a source region of the main MOSFET in plan view. A source potential is supplied to a source region of the sense MOSFET via a wiring surrounded by the source pad in plan view, a field plate electrode formed in a trench together with a gate electrode, and wirings formed outside the source pad."
The patent was filed on Feb. 16, 2023, under Application No. 18/170,153.
*For fur...