US Patent Issued to RENESAS ELECTRONICS on Nov. 25 for "Semiconductor device including resistive random access nonvolatile memory for increasing readout margin" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,508, issued on Nov. 25, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device including resistive random access nonvolatile memory for increasing readout margin" was invented by Koichi Takeda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device capable of increasing readout margin in a nonvolatile resistive random access memory is provided. A clamping circuit applies fixed potential to each of a memory element and a reference resistive element. A pre-charge circuit pre-charges first and second nodes to power-source potential. A sense amplifier amplifies the potential difference between the potential of the ...