US Patent Issued to RENESAS ELECTRONICS on Nov. 25 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,660, issued on Nov. 25, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Sho Nakanishi (Tokyo) and Kodai Ozawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a technique for enhancing adhesion between a semiconductor substrate and a back surface electrode covering the back surface thereof. In particular, the enhancing adhesion technique includes: providing a semiconductor substrate SB having a main surface and a back surface opposite to the main surface, the back surface including n-type silicon; forming a first metal layer on the back surface of the se...