US Patent Issued to RENESAS ELECTRONICS on Nov. 11 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,287, issued on Nov. 11, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Tadashi Yamaguchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A performance of a memory cell including a ferroelectric film is improved. Reliability of the memory cell is ensured. A semiconductor device having a memory cell includes: a plurality of semiconductor layers configuring a channel region; a pair of semiconductor layers SI2 provided so as to sandwich the plurality of semiconductor layers SI1 in an X direction, connected to the plurality of semiconductor layers SI1, and configuring a...