ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,925, issued on May 6, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yuki Murayama (Tokyo), Makoto Koshimizu (Tokyo), Takahiro Mori (Tokyo), Junjiro Sakai (Tokyo) and Satoshi Iida (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is formed a semiconductor device including, as the uppermost-layer wiring of the multilayer wiring layer, a plurality of first wirings, a second wiring, a plurality of first dummy wirings, a second dummy wiring, and a passivation film covering these wirings. The passivation film is patterned by etching with a photoresist film used as a...