US Patent Issued to Renesas Electronics on May 20 for "Semiconductor device including semiconductor chip having power transistor and temperature sensing diode" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,356, issued on May 20, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device including semiconductor chip having power transistor and temperature sensing diode" was invented by Toshiyuki Hata (Tokyo) and Zen Tomizawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including: a first semiconductor chip having a first power transistor and a temperature sensing diode; and a second semiconductor chip having a second power transistor, but not having a temperature sensing diode."

The patent was filed on Feb. 27, 2024, under Application No. 18/588,573.

*For further information, including images, charts and ...