ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,118, issued on May 20, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device" was invented by Yasuyuki Morishita (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a protection element configured by a MOSFET, and the protection element has a multilayer metal wiring structure. The multilayer metal wiring structure includes drain connection wirings connected to drain regions of the MOSFET and source connection wirings connected to source regions of the MOSFET. In a part of a layer of the multilayer metal wiring structure where both the drain connection wirings and the source connection wirings are ...