ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,610, issued on May 13, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Hitoshi Maeda (Tokyo) and Yoshiyuki Kawashima (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A height of an upper surface of a control gate electrode is lower than a highest position of a lower surface of a silicide layer on a memory gate electrode adjacent to the control gate electrode via an ONO film. As a result, a structure in contact with the ONO film between the control gate electrode and the memory gate electrode is only the control gate electrode and the memory gate electrode made of polysilicon."
The patent was filed on O...