ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,205, issued on March 25, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Yoshiki Yamamoto (Tokyo), Hideki Makiyama (Tokyo), Toshiaki Iwamatsu (Tokyo) and Takaaki Tsunomura (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitr...