ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,708, issued on June 3, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Takehirou Mariko (Tokyo), Yasuhiro Okamoto (Tokyo) and Senichirou Nagase (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed i...