US Patent Issued to RENESAS ELECTRONICS on June 24 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,557, issued on June 24, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yoshito Nakazawa (Tokyo) and Tomohiro Imai (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to one embodiment includes an IGBT having a p-type collector layer and an n-type field stop layer on a back surface of a silicon substrate. The n-type field stop layer is selectively provided on an upper side of the p-type collector layer such that a first end portion of the n-type field stop layer is separated from a first side surface of the silicon substrate by a predete...