ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,573, issued on June 24, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Seiji Hirabayashi (Tokyo) and Yusuke Ojima (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A performance of a semiconductor device including a main MOSFET and a sensing MOSFET having a double-gate structure including a gate electrode and a field plate electrode inside a trench is improved. A main MOSFET including a gate electrode and a field plate electrode inside a second trench and a sensing MOSFET for electric-current detection including a gate electrode and a field plate electrode inside a fourth trench are surrounded by differ...