US Patent Issued to RENESAS ELECTRONICS on June 17 for "Semiconductor device with protective film for reducing aluminum slide in aluminum wiring and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,410, issued on June 17, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device with protective film for reducing aluminum slide in aluminum wiring and manufacturing method thereof" was invented by Takashi Aoki (Tokyo) and Takehiro Ueda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an aluminum layer, a passivation film, and a protective film arranged between the aluminum layer and the passivation film. A plurality of aluminum regions are formed in the aluminum layer. A width of a gap between the adjacent aluminum regions is equal to or less than twice a thickness of the protective film 140. Th...