US Patent Issued to RENESAS ELECTRONICS on July 8 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,624, issued on July 8, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yanzhe Wang (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Characteristics of a semiconductor device having a non-volatile memory are improved. The non-volatile memory has the following configuration: a semiconductor substrate; a first gate electrode portion arranged over the semiconductor substrate; a second gate electrode portion arranged over the semiconductor substrate so as to be adjacent to the first gate electrode portion; a first insulating film formed between the first gate electrode por...